| PART |
Description |
Maker |
| IBM13T16644NPA |
16M x 64 PC100 SDRAM(1MB PC100 同步动态RAM)
|
IBM Microeletronics
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| EDS2516CDTA-75-E |
256M bits SDRAM (16M words x 16 bits)
|
Elpida Memory, Inc.
|
| EDS2516ADTA-75-E EDS2516ADTA-75 |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| EDS1616AGTA-75-E EDS1616AGTA EDS1616AGTA-6B-E |
16M bits SDRAM (1M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| T89C51AC2-RLSC-M T89C51AC2-RLSE-M T89C51AC2-RLSI-M |
8-bit MCU with 32K bytes Flash, 10 bits A/D and EEPROM
|
ATMEL Corporation
|
| TMP87PH20 TMP87PH20F TMP87PM20F |
One Time PROM microcontroller with low-power 128K bits(16K bytes) electrically programmable read only memory
|
Toshiba Semiconductor
|
| V43648S04VTG-10PC |
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器PC100 SDRAM模块)
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64浣???ц?????插?PC100 SDRAM妯″?)
|
Mosel Vitelic, Corp.
|
| MC68HC705P9VDW MC68HC705P9VP MC68HC705P9VS |
Microcontroller, 2104 bytes, 48 bytes EPROM, 128 bytes RAM
|
Motorola
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
